Systems (VGF) for Semiconductors and Photovoltaics

New Technology for compound semiconductor crystals

In today’s fast-developing information society, methods for rapid, broadband data transmission are gaining constantly in importance. For optoelectronic and high-frequency applications, increasing use is being made of low-dislocation compound semiconductors.

The basic materials most frequently used for the latter, gallium arsenide (GaAs) and indium phosphide (InP), differ from silicon (Si) in such a way that their efficiency in interacting with light is greater by about three orders of magnitude. Furthermore, they possess greater electron mobility, thus enabling the construction of transistors with high cut-off frequencies. Such compound semiconductors are therefore predestined for the use in mobile wireless communication (e.g. UMTS networks), for fibre-optic networks, high brightness diodes and laser TV.

The Czochralski process, which currently achieves the best results of all known processes in crystal growing using silicon as raw material, is less suitable for the starting materials for compound semiconductors, despite being so frequently used for the time being.

With the development of a high-pressure VGF (Vertical Gradient Freeze) equipment in collaboration with the Fraunhofer Institute in Erlangen, Crystal Growing Systems has designed and manufactured the first commercially available facility for growing compound semiconductor crystals. The modular VGF system is available for this interesting market of the future since first half of 2003.

	Typ Kronos In the vertical gradient freeze (VGF) process, a crystal solidifies directionally in a crucible with vertical temperature gradient. Compared to the Czochralski process, this provides the advantage of lower ... more

	Multi Crystallizer Vacuum furnace designed for directional solidification (based on Vertical-Gradient-Freeze Process) of multi-crystalline solar silicon ingots for photovoltaic wafer production ... more

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