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Asyntis 2.2

Fully Automated Remote Plasma System

 

Asyntis 2.2  
Technical specifications
High throughput:

 up to 40 w/h @ 12”
(3 µm removal incl. Passivation)
Versatile Substrates:
 6”, 8”, 12” and 8”
12”-Framed Wafers

 
High Uniformity:
  <= 7% @ 8”
 <= 10% @ 12”
Related Applications:

Stress Relief
Wafer Thinning
Passivation

 

  

Applications

 

  • Stress Relief (Wafer Backside and Chip Side)
  • Wafer Thinning
  • Passivation (Oxide, Nitride, mix)
  • Micro-Roughening (soft-rough to porous silicon)

Advanced Remote Plasma Applications:
  • 3M – TAIKO - Dicing - Wafer Thinning

 

 

 

Business unit

gb Semiconductor Systems



 

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Your service contact

 

PVA TePla AG
Plasma Systems
Ammerthalstr. 34

D-85551 Kirchheim

+49 (0) 89/905 03-0

E-mail: service.plasma@pvatepla.com

 

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Downloads / Information Material

 

You can refer information material at our Download-Service , or address an inquiry at our Contact Form.

 


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© PVA TePla AG 2012