SiGe-Epitaxy

A pioneering new approach

SiGe technology is of fundamental importance in the field of high-speed data transmission in satellite, wireless local network and mobile wireless systems, for analogue and digital signals with frequencies of up to 100 GHz and more, and which therefore have to be processed within fractions of a second.

Compared to ‘conventional’ GaAs technology, the enormous advantage of SiGe technology is that circuits based on such semiconductors can be engineered monolithically, in combination with conventional CMOS circuits, on the same Si substrate. This technology can therefore be integrated into existing production lines, and to that extent does not necessitate making costly new investments. Furthermore, the much higher degree of semiconductor integration entailed by SiGe technology makes it feasible to achieve even greater miniaturization, including one-chip solutions for entire systems (‘System-on-Chip’).

With the Low Pressure Chemical Vapor Deposition plant (LPCVD) designed and manufactured by CGS, the semiconductor industry has access to facilities for low-temperature epitaxy that meets every conceivable requirement for precise film thickness, composition of film and doping profile. The system, featuring a vertical reactor, enables up to 100 wafers with a diameter of 200mm or 300mm to be processed in a single batch. The modular design of this system enables easy adaptation to future needs in process technology, for example by adding new modules.

	Typ Delta This low-pressure/low-temperature equipment is designed for chemical vapour deposition (CVD) of SiGe or SiGe:C onto silicon wafers of 200 and 300mm diameter. The modular system with vertically arranged reactor is intended for cassette-to-cassette operation. The specific advantages ... more

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