Asyntis 2.2
Fully Automated Remote Plasma System
 | | Technische Spezifikationen
High throughput:
| up to 40 w/h @ 12”
(3 µm removal incl. Passivation)
| Versatile Substrates:
| 6”, 8”, 12” and 8”
12”-Framed Wafers | High Uniformity:
| <= 7% @ 8”
<= 10% @ 12”
| Related Applications: | Stress Relief
Wafer Thinning
Passivation |
Anwendungsmöglichkeiten - Stress Relief (Wafer Backside and Chip Side)
- Wafer Thinning
- Passivation (Oxide, Nitride, mix)
- Micro-Roughening (soft-rough to porous silicon)
Advanced Remote Plasma Applications:- 3M – TAIKO - Dicing - Wafer Thinning
Geschäftsbereiche Semiconductor Systems
Ihr Ansprechpartner bei weiteren Fragen
PVA TePla AG
Plasma Systems
Ammerthalstr. 34 D-85551 Kirchheim +49 (0) 89/905 03-0 E-mail: mailto:service.plasma@pvatepla.com
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