Infrared Defect and Stress Analysis

Infrared‑based metrology plays a crucial role in understanding wafer quality, structural integrity, and process‑induced effects during semiconductor manufacturing. With our SIRD service, PVA TePla provides powerful tools to reveal defects and internal stress conditions that remain invisible to conventional inspection methods. These complementary techniques deliver fast, precise, and non‑destructive insight into material behavior, supporting yield improvement, process control, and the reliable qualification of advanced device structures.

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SIRD – Scanning Infrared Depolarization

SIRD offers high‑resolution mapping of internal stress fields using infrared birefringence. It provides detailed visualization of stress distributions in semiconductor wafers and device structures, enabling targeted analysis of stress‑induced defect mechanisms and process optimization.

Measurements can be performed on wafers up to 450 mm in diameter, with manual or automated handling. SIRD is ideal for monitoring process‑induced defects and ensuring high‑quality wafer surfaces throughout manufacturing.

Consistent and Comparable Results
Our SIRD evaluations are supported by advanced analysis software, ensuring precise quantitative and qualitative assessment of crystal‑related defects. All results can be adapted to your internal reporting standards, providing full comparability across wafers and process steps. Our specialists help interpret defect signatures and their relevance for yield, process stability, and material performance.

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