Float-Zone process

Also known as the “zone melting process,” the floating-zone technology is used for the production of ultra-high purity monocrystalline silicon (achieving purities of up to 11N), as primarily used  in components for high-performance electronics, microsystems technology, and semiconductor technology. The polysilicon industry, solar industry, and R&D sectors also benefit from this technology. The advantage of the FZ process over methods using quartz crucibles (quartz = silicon dioxide) is the significantly lower contamination with oxygen. There are also no additional costs for single-use crucibles.

 

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The process

In a chamber, a purified, polycrystalline silicon rod (source rod) is positioned above a high-frequency induction coil. To avoid electrical breakdown, the process is usually conducted in an argon atmosphere at pressures between 0.5 and 5 bar. By adding suitable gases, such as phosphine or diborane, which diffuse into the melt, enables doping of the silicon.
By coupling the high frequency  into the silicon rod near the surface, the lower end is melted contactlessly. To ensure the zone melts as homogeneously as possible, the rod is slowly rotated.

Zone Melting Crystal Growth Method

The molten zone is brought into contact with a thin monocrystalline seed crystal located below the coil and moved upward through a small hole in the center of the coil. After the seed crystal is brought into contact with the liquid lower end of the source rod, the seed crystal  is slowly moved downward and also rotated. A monocrystalline crystal then grows according to the crystal structure and orientation of the seed. The liquid zone is maintained by slowly feeding and melting the source rod from above while the monocrystal continues to grow at the bottom of the seed crystal.

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View into a float‑zone crystal growth chamber showing the molten silicon zone during processing
View into a float‑zone crystal growth chamber showing the molten silicon zone during processing

Relevant industries

Semiconductor

Due to its low defect density and high electrical mobility, float-zone silicon is particularly suitable for components in high-frequency technology, such as mobile phone base stations and radar systems.

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Power Electronics

Floatzone silicon is used in the production of power semiconductors such as diodes, thyristors, IGBTs, and MOSFETs. These components are used in power supplies, inverters, drive systems, and energy transmission.

The Technology

The floating-zone (FZ) technology enables the production of ultra-pure silicon monocrystals with high resistivity for high-performance electronics and semiconductor applications. Thanks to continuous gas-phase doping, a homogeneous resistivity distribution can be achieved over the entire crystal length, ensuring the desired electrical properties are uniformly present in the crystal.

Efficient Crystal Growth

Compared to the Czochralski process, the Float-Zone process offers lower material and energy costs, as no costly quartz crucibles are required and only a small crystal section is heated. The pulling speed is significantly higher. Additionally, repeated processing can gradually improve the purity of the silicon crystals.

Sustainable Production, Made in Europe

For the production of standard and customer‑specific pressure vessels, components, and vacuum chambers, we operate our own manufacturing facility in Europe. It is entirely powered without the use of fossil fuels, fully aligning with our sustainability objectives.

Key advantages at a glance

  • Fast delivery times: Greater independence from external suppliers
  • Flexible customization: Short‑notice design changes can be implemented immediately.
  • Reliable material availability: Constant access to high‑quality materials thanks to long‑standing local partnerships.
  • Highest processing quality incl. standards: Performing welding operations in‑house allows direct monitoring of joint conformity, which is essential for meeting standards such as UNI EN ISO 3834.
  • Top‑tier standards: Naturally, our facility meets our stringent requirements for quality, safety, and sustainability.
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Front view of a float‑zone crystal growth chamber with visible molten silicon zone
Operator in cleanroom suit monitoring a float‑zone crystal growth system through the observation window
Close-up of crystal growth vessel openings with metal flanges and condensation on the surface

The Float Zone systems at a glance

Float‑zone crystal growth system with central vertical chamber and control unit.

FZ-14M/FZ-14MG

The float-zone crystal growth system FZ-14M was specifically developed for sample preparation of monocrystalline silicon crystals for material analysis in industrial polysilicon production.

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Large float‑zone crystal growth system with vertical process chamber and surrounding support structure

FZ-35

The float-zone crystal growth system FZ-35 is used for the industrial production of monocrystalline silicon crystals with diameters up to 200 mm (8"). Depending on the dimensions of the source rods, crystals of up to 2,000 mm in length can be pulled.

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