The crystal diameter and the height of the molten zone can be monitored during the process using a camera. Due to contactless melting – the high ultimate vacuum generated by a turbomolecular pump and the use of ultra-pure argon as the process atmosphere – contamination during the process is effectively prevented.
For the growth of large crystals, an argon atmosphere with up to 5 bar overpressure can be generated in the FZ-35. Both the upper spindle and the coil can be positioned automatically. It is also possible to introduce nitrogen into the process chamber in addition to argon. Optional features include a gas doping system for crystal doping, a closed DI cooling water system, a shaper for processing source rods, and a system for adjusting the orientation of the seed crystal.
| Crystal pulling length | 2,700 mm |
| Crystal diameter | Up to 200 mm (8") |
| Final vacuum | 2.5 x 10-5 mbar |
| Max. overpressure | 5.0 bar(g) |
| Material: Silicon |
| Height | 11,550 mm |
| Width | 3,800 mm |
| Depth | 4,050 mm |
| Footprint (total) | 5,000 x 6,000 mm |
| Weight (total) | Approx. 2,500 kg |
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