Key Features

SiCma

  • High-quality mass production up to 12''
  • Compact design
  • High repeatability
  • High-quality standard for maximum yield
  • Advanced automation
  • Flexible loading and unloading systems
  • Modular options such as turbo pump and various measurement devices

SiCma thus offers an ideal platform for the growth of silicon carbide and aluminum nitride in demanding production environments and can be individually adapted to specific requirements.

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Production hall with technicians assembling SiCma PVT crystal growth systems
Technical data
Typical crystal diametersUp to 12"
Frequency6 - 10 kHz
Footprint [W x D]1,200 x 2,500 mm
Height incl. signal lamp<3,500 mm
Total weight approx.1,850 kg
Working pressure1 - 900 mbar
Working temperature max.2,400 °C
Materials 3C-SiC; 4H-SiC; 6H-SiC, AlN; …


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Coil lift
Turbomolecular pump
Hot zone rotation
Upper and lower pyrometer
H₂ line
Wide range of software options


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