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Features at a glance

SIRD SiC 200

  • Stress Measurement
    Quantitative stress measurement on wafer level
     
  • Wide doping ranges
    Doping levels with resistivities down to 5.1 mOhm cm possible
     
  • Automation
    Full automation with recipe based measurement and analysis. SECS/GEM and OHT ready.
     
  • Different semiconductor materials
    Silicon Carbide, Gallium Nitride, Silicon, Gallium Arsenide, Indium, Phosphide, Aluminum Nitride etc.
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SIRD SiC 200
Technical Data
PrincipleStress-induced optical birefringence
Stress Sensitivity≥ 0.1 kPa in-plane shear stress
Lateral Resolution≈ 40 μm
ThroughputUp to 15 wafers per hour (wph)
Wafer HandlingManual or automated wafer handling


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