Functional Description

SIRD

  • A robot transfers the wafer from the carrier to the measurement stage. The carrier can be placed either by an operator or automatically via OHT.
  • The tool auto-tunes itself for optimal measurement settings, independent of the material's doping grade.
  • Data is recorded according to a predefined measurement protocol detailing the area of interest, resolution, and measurement mode.
  • After measurement, the wafer is returned to the carrier, and automated analysis of the measured map begins.
  • Numerical data, such as defect counts by type or intensity, and customizable reports are generated and, if desired, sent to the host via the standard SECS/GEM protocol.
Next
SIRD
Technical Data
Principle Stress-induced optical birefringence
Stress sensitivity≥ 0.1 kPa in-plane shear stress
Lateral resolution≥ 100 μm
Scan speedUp to 1 cm²/s
Wafer diameters150 mm, 200 mm, 300 mm


Download product flyer

Interested in SIRD?

Get in touch