技術資料
| 測量模式 | 反射率 |
| 測量時間 | < 10 秒(典型值) |
| 波長範圍 | VNIR:400–1,000 nm | SWIR 1:900–1,700 nm |
| 光譜解析度 | VNIR:1.34 奈米 | SWIR:3.5 奈米 |
對 VEpioneer 有興趣嗎?
從您的實驗台獲得全面洞察
The PVA TePla VEpioneer MICRO is a specialized metrology system designed for precise inspection tasks within semiconductor equipment environments.
A PVA TePla metrology unit designed for semiconductor equipment analysis, showing a scanning sensor positioned over a wafer stage.
This PVA TePla system is designed for semiconductor metrology, featuring a glass chamber that houses a wafer for precise inspection.
| 測量模式 | 反射率 |
| 測量時間 | < 10 秒(典型值) |
| 波長範圍 | VNIR:400–1,000 nm | SWIR 1:900–1,700 nm |
| 光譜解析度 | VNIR:1.34 奈米 | SWIR:3.5 奈米 |
對 VEpioneer 有興趣嗎?